Impact of Interfaces on Charge Carriers in Semiconductors

Impact of Interfaces on Charge Carriers in Semiconductors

Author(s): Ilka Hermes

Publication: Bunsen-Magazin 2024, 5, 137-138

Publisher: Deutsche Bunsen-Gesellschaft für physikalische Chemie e.V., Frankfurt

Language: English

DOI: 10.26125/ghh2-8m42

Abstract: Extended defects, like interfaces or grain boundaries in semiconductors, can introduce trap states, dopants or electrostatic barriers. The implications for charge carriers in (opto)electronic devices can be manifold: They can act as recombination centers or restrict the charge transport among others. We are investigating these implications on the nanoscale, via a combination of advanced scanning probe microscopy with luminescence microscopy for low-dimensional and thin film semiconductors.

Cite this:  I. Hermes, Bunsen-Magazin 2024, 5, 137-138, DOI: 10.26125/ghh2-8m42

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